^ztni-c-onduckoi ij^ioauati, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor BU104 description ? collector-emitter breakdown voltage- : v(br)ceo= 150v(min.) ? low collector saturation voltage- : vce(sat)= 2.5v(max.)@ lc= 7a applications ? designed for use in horizontal deflexion output tv receivers. absolute maximum ratings(ta=25'c) symbol vcbo vceo vcex vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage vbe= -5v emitter-base voltage collector current-continuous collector current-peak repetitive base current-continuous collector power dissipation tc- 25 c junction temperature storage temperature range stage of b/w value 400 150 400 10 7 15 3 85 200 -65-200 thermal characteristics symbol rth j-c parameter thermal resistance, junction to case unit v v v v a a a w 'c -c max 2.0 unit ?c/w 3 2 pin 1.da5e 2. emitter 3. collect or (case) to-3 package ^ % f ?? a l^?? m fcil w? p|^*1 i i ii -41? dj i--l-* /ctt"\^ vl?^/' m^n l i _ f j pl r / \ ^ \n uw mm a 39 b 2s.30 <; 7.80 d 0.90 s (.40 max 10 3s&? 8.30 10 1.60 6 1092 h s46 k 11 40 l 1675 n 1940 jj 400 u 30 00 v 430 13.50 17.0s 1962 420 3020 450 : ea t i b 1 quality semi-conductors
silicon npn power transistor BU104 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat) vee(sat) icbo icex iebo hfe fi parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product conditions lc= 50ma; ib= 0 lc= 7a; ib= 1a lc=7a;la=1a vcb= 250v; ie= 0 vce= 400v; vbe= -5v veb=10v;lc=0 lc=5a;vce= 1.75v lc= 0.5a; vce= 10v min 150 10 typ. 10 max 2.5 2.5 0.5 1.0 10 50 unit v v v ma ma ma mhz
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